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DISCRETE SEMICONDUCTORS
DATA SHEET
BFM520 Dual NPN wideband transistor
Product specification Supersedes data of 1995 Sep 04 File under Discrete Semiconductors, SC14 1996 Oct 08
Philips Semiconductors
Product specification
Dual NPN wideband transistor
FEATURES * Small size * Temperature and hFE matched * Low noise and high gain * High gain at low current and low capacitance at low voltage * Gold metallization ensures excellent reliability. APPLICATIONS * Oscillator and buffer amplifiers * Balanced amplifiers * LNA/mixers.
b1 6
handbook, halfpage
BFM520
PINNING - SOT363A PIN 1 2 3 4 5 6 SYMBOL b1 e1 c2 b2 e2 c1 base 1 emitter 1 collector 2 base 2 emitter 2 collector 1 DESCRIPTION
5
4 c1 b2 e1 e2
MAM210
c2
DESCRIPTION Dual transistor with two silicon NPN RF dies in a surface mount 6-pin SOT363 (S-mini) package. The transistor is primarily intended for wideband applications in the GHz-range in the RF front end of analog and digital cellular phones, cordless phones, radar detectors, pagers and satellite TV-tuners. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. - 13 - - - -
1 2 3 Top view Marking code: N2.
Fig.1 Simplified outline and symbol.
TYP.
MAX. - - - - 1.6 230 115
UNIT
Any single transistor Cre fT s 21 GUM F Rth j-s
2
feedback capacitance transition frequency insertion power gain maximum unilateral power gain noise figure thermal resistance from junction to soldering point
Ie = 0; VCB = 3 V; f = 1 MHz IC = 20 mA; VCE = 3 V; f = 900 MHz; Tamb = 25 C IC = 20 mA; VCE = 3 V; f = 900 MHz; Tamb = 25 C IC = 5 mA; VCE = 3 V; f = 900 MHz; S = opt single loaded double loaded
0.4 9 14.5 15 1.2 - -
pF GHz dB dB dB K/W K/W
IC = 20 mA; VCE = 3 V; f = 900 MHz -
1996 Oct 08
2
Philips Semiconductors
Product specification
Dual NPN wideband transistor
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. - - - - up to Ts = 118 C; note 1 - -65 -
BFM520
MAX.
UNIT
Any single transistor VCBO VCEO VEBO IC Ptot Tstg Tj collector-base voltage collector-emitter voltage emitter-base voltage DC collector current total power dissipation storage temperature junction temperature open emitter open base open collector 20 8 2.5 70 1 +175 175 V V V mA W C C
THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point; note 1 single loaded double loaded CONDITIONS VALUE 230 115 UNIT K/W K/W
Note to the Limiting values and Thermal characteristics 1. Ts is the temperature at the soldering point of the collector pin.
1996 Oct 08
3
Philips Semiconductors
Product specification
Dual NPN wideband transistor
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS IC = 2.5 A; IE = 0 IE = 2.5 A; IC = 0 VCB = 6 V; IE = 0 IC = 20 mA; VCE = 6 V IC1 = IC2 = 20 mA; VCE1 = VCE2 = 6 V IE1 = IE2 = 30 mA; Tamb = 25 C MIN. TYP. - - - - 120
BFM520
MAX. - - - 50 250 - -
UNIT
DC characteristics of any single transistor V(BR)CBO V(BR)CEO V(BR)EBO ICBO hFE hFE VBEO collector-base breakdown voltage emitter-base breakdown voltage collector-base leakage current DC current gain 20 8 2.5 - 60 V V V nA collector-emitter breakdown voltage IC = 10 A; IB = 0
DC characteristics of the dual transistor ratio of highest and lowest DC current gain difference between highest and lowest base-emitter voltage (offset voltage) 1 0 1.2 1
mV
AC characteristics of any single transistor fT Cc Cre GUM transition frequency collector capacitance feedback capacitance maximum unilateral power gain; note 1 IC = 20 mA; VCE = 3 V; f = 1 GHz IE = ie = 0; VCB = 3 V; f = 1 MHz IC = 0; VCB = 3 V; f = 1 MHz IC = 20 mA; VCE = 3 V; Tamb = 25 C; f = 900 MHz IC = 20 mA; VCE = 3 V; Tamb = 25 C; f = 2 GHz s 21 F
2
- - - - - 13 - - -
9 0.5 0.4 15 9 14.5 1.2 1.7 1.9
- - - - - - 1.6 2.1 -
GHz pF pF dB dB dB dB dB dB
insertion power gain noise figure
IC = 20 mA; VCE = 3 V; f = 900 MHz; Tamb = 25 C IC = 5 mA; VCE = 3 V; f = 900 MHz; S = opt IC = 20 mA; VCE = 3 V; f = 900 MHz; S = opt IC = 5 mA; VCE = 3 V; f = 2 GHz; S = opt
Note
s 21 2 1. GUM is the maximum unilateral power gain, assuming s12 is zero. G UM = 10 log ------------------------------------------------------------ dB ( 1 - s 11 2 ) ( 1 - s 22 2 )
1996 Oct 08
4
Philips Semiconductors
Product specification
Dual NPN wideband transistor
BFM520
handbook, halfpage
1.5
MBG228
MRA705
handbook, halfpage
12
Ptot (mW) double loaded 1
fT (GHz) 8
VCE = 6V
VCE = 3V single loaded 0.5 4
0 0 50 100 150 Ts (oC) 200
0 10-1
1
10
IC (mA)
102
f = 1 GHz; Tamb = 25 C.
Fig.2 Power derating as a function of soldering point temperature; typical values.
Fig.3
Transition frequency as a function of collector current; typical values.
MRA703
handbook, halfpage
250
handbook, halfpage
0.6
MRA704
hFE 200
Cre (pF)
0.4 150
100 0.2 50
0 10-2
10-1
1
10 I (mA) 102 C
0
0
4
8
VCB (V)
12
VCE = 6 V.
IC = 0; f = 1 MHz.
Fig.4
DC current gain as a function of collector current; typical values.
Fig.5
Feedback capacitance as a function of collector-base voltage; typical values.
1996 Oct 08
5
Philips Semiconductors
Product specification
Dual NPN wideband transistor
BFM520
handbook, halfpage
20
MGG203
handbook, halfpage
20
MGG204
gain (dB) 16
MSG/Gmax GUM
gain (dB) 16
12
12 MSG/Gmax
8
8
GUM
4
4
0
0
10
20
IC (mA)
30
0 0 10 20 IC (mA) 30
f = 900 MHz; VCE = 3 V.
f = 2 GHz; VCE = 3 V.
Fig.6
Gain as a function of collector current; typical values.
Fig.7
Gain as a function of collector current; typical values.
MGG205
MGG206
handbook, halfpage
50
handbook, halfpage
50
gain (dB) 40 GUM
gain (dB) 40 GUM MSG/Gmax
30
30
MSG/Gmax 20 20
10
10
0 10
102
103
f (MHz)
104
0 10
102
103
f (MHz)
104
IC = 5 mA; VCE = 3 V.
IC = 20 mA; VCE = 3 V.
Fig.8
Gain as a function of frequency; typical values.
Fig.9
Gain as a function of frequency; typical values.
1996 Oct 08
6
Philips Semiconductors
Product specification
Dual NPN wideband transistor
BFM520
handbook, halfpage
4
MRA714
handbook, halfpage
20
MLB585
F (dB) 3
G ass (dB) 15 f = 900 MHz 1000 MHz
f = 2000 MHz 2
10
100100 1000 MHz 900 MHz 500 MHz
5
2000 MHz
1
0 1 10 IC (mA) 10
0
2
1
10
I C (mA)
10 2
VCE = 3 V.
VCE = 3 V.
Fig.10 Minimum noise figure as a function of collector current, typical values.
Fig.11 Associated available gain as a function of collector current, typical values.
handbook, halfpage
4
MRA715
handbook, halfpage
20
MLB586
F (dB) 3
G ass (dB) 15
I C = 5 mA
20 mA
2 IC = 20 mA 1
10
5
5 mA
0 102
10
3
f (MHz)
10
4
0 10 2
10 3
f (MHz)
10 4
VCE = 3 V.
VCE = 3 V.
Fig.12 Minimum noise figure as a function of frequency, typical values.
Fig.13 Associated available gain as a function of frequency, typical values.
1996 Oct 08
7
Philips Semiconductors
Product specification
Dual NPN wideband transistor
APPLICATION INFORMATION SPICE parameters for any single BFM520 die
handbook, halfpage
BFM520
C1
C2
SEQUENCE No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19(1) 20(1) 21(1) 22 23 24 25 26 27 28 29 30 31 32 33 34 35(1) 36(1) 37(1) 38 Note
PARAMETER IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RB IRB RBM RE RC XTB EG XTI CJE VJE MJE TF XTF VTF ITF PTF CJC VJC MJC XCJC TR CJS VJS MJS FC
VALUE 1.016 220.1 1.000 48.06 510.0 283.0 2.035 100.7 0.988 1.692 2.352 24.48 1.022 10.00 1.000 10.00 0.775 2.210 0.000 1.110 3.000 1.245 600.0 0.258 8.616 6.788 1.414 110.3 45.01 447.6 189.2 0.071 0.130 543.7 0.000 750.0 0.000 0.780
UNIT fA - - V mA fA - - - V mA aA - A - eV - pF mV - ps - V mA deg fF mV - - ps F mV - -
LP LP
B1
LB
T1
T2
LB
B2
LE
LE
E1
E2
MBG188
Fig.14 Package equivalent circuit SOT363A (inductance only).
Lead inductances (nH)
LP LB LE
0.4 0.6 1.0
E2
3 27 1 3 48
B1
E1
6 27 17 36
E2
B2
3 36 17
E1
C2
48 3
B2
C1
6
MBG189
C2
Fig.15 Package capacitance (fF) between indicated nodes.
1. These parameters have not been extracted, the default values are shown. 1996 Oct 08 8
Philips Semiconductors
Product specification
Dual NPN wideband transistor
PACKAGE OUTLINE
BFM520
handbook, full pagewidth
0.2 1.1 0.8 0.9 0.6 0.1 0.0 0.25 0.10
0.3 0.1 A 1.35 1.15 0.2 M B B
0.65
1
6 0.3 0.2 (6x) 2.2 1.8
0.65
2
5
3 2.2 2.0
4
MSA368
0.2 M A
Dimensions in mm.
Fig.16 SOT363.
1996 Oct 08
9
Philips Semiconductors
Product specification
Dual NPN wideband transistor
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Short-form specification Limiting values
BFM520
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. The data in this specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1996 Oct 08
10

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